ds23044 rev. c-2 1 of 2 sbl830-sbl860 www.diodes.com diodes incorporated sbl830 - sbl860 8.0a schottky barrier rectifier features case: molded plastic terminals: plated leads, solderable per mil-std-202, method 208 polarity: see diagram weight: 2.3 grams (approx.) mounting position: any marking: type number mechanical data schottky barrier chip guard ring for transient protection low power loss, high efficiency high current capability, low v f high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications plastic material: ul flammability classification rating 94v-0 single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. l m a n p d e k c b j g r pin1+ pin 1 pin 2 pin 2 - case + to-220ac dim min max a 14.22 15.88 b 9.65 10.67 c 2.54 3.43 d 5.84 6.86 e 6.35 g 12.70 14.73 j 0.51 1.14 k 3.53 4.09 l 3.56 4.83 m 1.14 1.40 n 0.30 0.64 p 2.03 2.92 r 4.83 5.33 all dimensions in mm characteristic symbol sbl 830 sbl 835 sbl 840 sbl 845 sbl 850 sbl 860 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 35 40 45 50 60 v rms reverse voltage v r(rms) 21 24.5 28 31.5 35 42 v average rectified output current (note 1) @ t c = 95 c i o 8a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 200 a forward voltage @ i f = 8a, t c = 25 c v fm 0.55 0.70 v peak reverse current @t c = 25 c at rated dc blocking voltage @ t c = 100 c i rm 0.5 50 ma typical junction capacitance (note 2) c j 700 pf typical thermal resistance junction to case (note 1) r jc 6.9 c/w operating and storage temperature range t j, t stg -65 to +150 c
ds23044 rev. c-2 2 of 2 sbl830-sbl860 www.diodes.com 0.1 1.0 10 100 0.2 0.4 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) f fi g . 2 t y pical forward characteristics sbl830 - sbl845 sbl850 - sbl860 0.6 0.8 50 100 150 0 200 250 300 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fi g . 3 max non-re p etitive sur g e current 8.3 ms single half-sine-wave jedec method 100 1000 4 000 0.1 1.0 10 100 c , capacitance (pf) j v , reverse voltage (v) r fi g . 4 t y pical junction capacitance t = 25 c j 0.01 0.1 1.0 10 100 0 40 80 120 i , instantaneous reverse current (ma) r percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics t = 100c j t = 75c j t = 25c j 0 4 8 2 050100150 i , average forward current (a) (av) t , case temperature ( c) c fi g . 1 fwd current deratin g curve 6 10
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